SECURITIES AND EXCHANGE COMMISSION
Washington, D.C. 20549
FORM 6-K
REPORT OF FOREIGN PRIVATE ISSUER
PURSUANT TO RULE 13a-16 OR 15d-16 OF
THE SECURITIES EXCHANGE ACT OF 1934
November 14, 2002
INFINEON TECHNOLOGIES AG
St.-Martin-Strasse 53
D-81541 Munich
Federal Republic of Germany
Tel: +49-89-234-0
(Address of principal executive offices)
Indicate by check mark whether the registrant files or will file annual reports
under cover of Form 20-F or Form 40-F.
Form 20-F /X/ Form 40-F / /
Indicate by check mark whether the registrant by furnishing the information
contained in this Form is also thereby furnishing the information to the
Commission pursuant to Rule 12g3-2(b) under the Securities Exchange Act of 1934.
Yes / / No /X/
If "Yes" is marked, indicate below the file number assigned to the registrant in
connection with Rule 12g3-2(b): 82-_____.
This report on Form 6-K contains a press release announcing the formation
of a joint venture for DRAM production between Infineon and Nanya Technology
Corporation, as well as related technology cooperation agreements.
[INFINEON TECHNOLOGIES LOGO]
News Release/Presseinformation
JOINT NEWS RELEASE BY INFINEON AND NANYA
INFINEON AND NANYA SEAL DRAM COOPERATION BY FOUNDING PRODUCTION JOINT VENTURE
AND AGREEING TECHNOLOGY DEVELOPMENT COLLABORATION
Munich/Germany and Taoyuen/Taiwan, November 13, 2002 - Infineon Technologies
(FSE/NYSE: IFX), Munich, and Nanya Technology Corporation (NTC), Taoyuen/
Taiwan, have signed final contracts concerning strategic cooperation on standard
memory chips (DRAMs). The cooperation will help each partner expand its position
in the DRAM market while sharing development costs. The agreement provides for
the joint development of advanced 0.09-micron and 0.07-micron production
technologies for 300mm wafers. Under the terms of the agreement the companies
have also set up a 50:50 joint venture for the production of DRAM chips and will
build a new joint 300mm facility in Taiwan. This facility will employ the
production technology developed jointly by the companies. Maximum production
capacity will approach 50,000 wafer starts a month once the facility is fully
operational. Initial production of the first 300mm wafers in the new facility is
expected in late 2003.
The new 300mm semiconductor facility will be constructed in two stages aligned
with the growth and development of the world semiconductor market. The first
stage, which is scheduled for completion in the second half of 2004, will give
the facility an initial monthly capacity of around 20,000 wafer starts.
Completion of the second stage, currently anticipated for mid-2006, will
increase capacity to around 50,000 wafer starts a month, making the new
semiconductor facility one of the world's largest. The total investment planned
in the next three years amounts to around Euro 2.2 billion. Infineon and Nanya
will each invest Euro 550 million in their innovative memory chip production
project until 2005, the lion's share of which will be used to ramp up production
in 2004 and 2005.
When operating at maximum capacity, the facility will create up to 1,300 new
jobs in Taiwan. The joint venture will be headquartered in Taoyuen/Taiwan, close
to Nanya's existing production site. Subject to approval by the antitrust
authorities, the joint venture will commence business operations on December 2,
2002.
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"This strategic partnership in the Asian growth market successfully extends our
offensive in the worldwide market for memory chips and we are expanding our
position as one of the three best semiconductor manufacturers", explains Dr.
Ulrich Schumacher, President and CEO of Infineon Technologies AG. "This
cost-efficient way of boosting production capacities will also help us capture
new business and drive our share of the global DRAM market up beyond the 20
percent mark."
"This partnership between our companies brings together our strengths, and
allows Nanya to achieve it's objective of being a highly competitive major
supplier worldwide", observed Dr. Jih Lien, President of Nanya Technologies. "We
believe that this additional capacity will move Nanya to the number four ranking
of DRAM makers with double digit market share."
New production technology, jointly developed at Infineon's Dresden site, will be
used in both companies and by the new joint venture. Further collaboration on
the development of 0.09-micron and 0.07-micron reference products in Munich is
also planned. Infineon and Nanya will between them commit more than 120 people
to the development projects. The first 300mm wafer memory products using the new
0.09-micron process will leave the production line in late 2003. Plans are also
in place to transfer the 0.09-micron production technology to 200mm wafers.
Infineon has already begun technical preparations for 0.09-micron production.
This November, for example, it produced the first demonstrators featuring a new
cell design and new materials.
The partners are developing the new production technology in concert using
Infineon's advanced DRAM trench technology for 300mm wafers, which the company
licenses to Nanya, as a starting point. The switch to the smaller 0.09-micron
and 0.07-micron geometries in chip design coupled with the outstanding area
efficiency and high capacity of the trench technology will further enhance
productivity.
The new joint venture in Taoyuen will join Infineon's international network of
DRAM production sites. The global integration of Infineon's memory facilities
ensures uniformly high levels of quality standards at all sites worldwide and a
constant exchange of know-how and experience.
ABOUT NANYA
Nanya Technology Corporation was officially founded on March 4, 1995. Set up to
conduct research and development, design, manufacture, and sales of
semi-conductor products, the company is headed by Mr. Y.C. Wang as the Chairman
of
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the Board. The main shareholder is Nanya Plastics Corporations of the Formosa
Plastics Group. Nanya started semiconductor production in 1996 and opened its
North American branch company in San Jose, California, in 1997. The company
began providing foundry services in 1997. For more information, please contact
Nanya Technology Corporation at 408/441-7819. For headquarters in Taiwan, please
call 886-3-328-1688 or visit the web site http://www.nanya.com.
ABOUT INFINEON
Infineon Technologies AG, Munich, Germany, offers semiconductor and system
solutions for the automotive and industrial sectors, for applications in the
wired communications markets, secure mobile solutions as well as memory
products. With a global presence, Infineon operates in the US from San Jose, CA,
in the Asia-Pacific region from Singapore and in Japan from Tokyo. In the fiscal
year 2002 (ending September), the company achieved sales of Euro 5.21 billion
with about 30,400 employees worldwide. Infineon is listed on the DAX index of
the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol:
IFX). Further information is available at www.infineon.com.
This news release is available at www.infineon.com/news.
CONTACT AT NANYA TECHNOLOGY CORPORATION
Charles Kau
Executive Vice President
Tel. +886-3-328-1688
Fax +886-3-396-0993
charleskau@ntc.com.tw
FOR THE BUSINESS AND TRADE PRESS: INFXX200211.021e
MEDIA RELATIONS CONTACT NAME: PHONE / FAX: EMAIL:
WORLDWIDE HEADQUARTERS RALPH HEINRICH +49 89 234 22404 / 28482 ralph.heinrich@infineon.com
U.S.A. LESLIE DAVIS +1 408 501-6790 / 2424 leslie.davis@infineon.com
ASIA KAYE LIM +65 6840 0689 / 0073 kaye.lim@infineon.com
JAPAN HIROTAKA SHIROGUCHI +81 3 5449 6795 / 6401 hirotaka.shiroguchi@infineon.com
INVESTOR RELATIONS +49 89 234 26655 / 26155 investor.relations@infineon.com
SIGNATURES
Pursuant to the requirements of the Securities Exchange Act of 1934, the
registrant has duly caused this report to be signed on its behalf by the
undersigned, thereunto duly authorized.
INFINEON TECHNOLOGIES AG
Date: November 14, 2002 By: /s/ ULRICH SCHUMACHER
----------------------------
Dr. Ulrich Schumacher
Chairman, President and
Chief Executive Officer
By: /s/ PETER J. FISCHL
----------------------------
Peter J. Fischl
Chief Financial Officer