New UFS Devices with KIOXIA’s 8^th Generation BiCS FLASH Boost Speed and Power Efficiency

KIOXIA America, Inc. today announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in high-performance storage. Engineered to meet the demands of next-generation mobile applications, including advanced smartphones with on-device AI, the new devices offer improved performance with greater power efficiency¹, in a small BGA package.

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With a blend of speed and low power use, KIOXIA UFS Ver. 4.1 devices are built to enhance user experiences - enabling faster downloads and smoother app performance.

UFS Ver. 4.1 devices from KIOXIA integrate the company’s innovative BiCS FLASH™ 3D flash memory and a controller in a JEDEC^®-standard package. These new UFS devices are built with KIOXIA’s 8th generation BiCS FLASH 3D flash memory². This generation introduces CBA (CMOS directly Bonded to Array) technology - an architectural innovation that marks a step-change in flash memory design. By directly bonding the CMOS circuitry to the memory array, CBA technology enables major gains in power efficiency, performance, and density.

With a blend of speed and low power use, KIOXIA UFS Ver. 4.1 devices are built to enhance user experiences - enabling faster downloads and smoother app performance.

Key Features include:

• Available in capacities of 256, 512 gigabytes (GB) and 1 terabyte (TB)
• Performance improvement over previous generation¹:
  • Random writes: 512 GB/1 TB approx. +30%
  • Random reads: 512 GB approx. +45%, 1 TB approx. +35%
• Power efficiency improvement over previous generation¹:
  • Reads: 512 GB/1 TB approx. +15% improvement
  • Writes: 512 GB/1 TB approx. +20% improvement
• Host Initiated Defragmentation enables delayed garbage collection for uninterrupted fast performance during critical times
• WriteBooster buffer resizing provides better flexibility for optimal performance
• Support of the UFS Ver. 4.1 standard
• Reduced package height for the 1 TB model compared to the prior generation³
• Uses KIOXIA’s 8^th generation BiCS FLASH 3D flash memory²

“By introducing UFS Ver. 4.1, KIOXIA continues to strengthen its commitment to leading flash storage innovation—delivering faster, smarter, and more secure experiences across next-generation devices,” said Maitry Dholakia, vice president, Memory Business Unit, for KIOXIA America, Inc. “This latest offering reflects our ongoing dedication to developing advanced memory solutions that meet the performance and efficiency demands of tomorrow’s mobile and computing platforms.”

For more information, please visit www.kioxia.com and follow the company on X, formerly known as Twitter and LinkedIn^®.

About KIOXIA America, Inc.

KIOXIA America, Inc. is the U.S.-based subsidiary of KIOXIA Corporation, a leading worldwide supplier of flash memory and solid-state drives (SSDs). From the invention of flash memory to today’s breakthrough BiCS FLASH™ 3D technology, KIOXIA continues to pioneer innovative memory, SSD and software solutions that enrich people's lives and expand society's horizons. The company's innovative 3D flash memory technology, BiCS FLASH, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems. For more information, please visit KIOXIA.com.

© 2025 KIOXIA America, Inc. All rights reserved. Information in this press release, including product pricing and specifications, content of services, and contact information is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable KIOXIA product specifications.

Notes:

Universal Flash Storage (UFS) is a product category for a class of embedded memory products built to the JEDEC UFS standard specification. Due to its serial interface, UFS supports full duplexing, which enables both concurrent reading and writing between the host processor and UFS device.

JEDEC is a registered trademark of JEDEC Solid State Technology Association

1: Compared to the previous generation 512 GB device “THGJFMT2E46BATV” and 1 TB device “THGJFMT3E86BATZ” respectively (512 GB/1 TB models only).

2: 512 GB/1 TB models only.

3. The previous generation 1 TB device “THGJFMT3E86BATZ”.

In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1 KB = 2^10 bytes = 1,024 bytes. The definition of 1 Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1 GB = 2^30 bytes = 1,073,741,824 bytes. 1 Tb = 2^40 bits = 1,099,511,627,776 bits. 1 TB = 2^40 bytes = 1,099,511,627,776 bytes.

Read and write speeds are the best values obtained in a specific test environment at Kioxia Corporation and Kioxia Corporation warrants neither read nor write speeds in individual devices. Read and write speed may vary depending on a device used and file size read or written.

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“KIOXIA continues to strengthen its commitment to leading flash storage innovation—delivering faster, smarter, and more secure experiences across next-generation devices.”